发明名称 CUTTING METHOD OF INSULATION SUBSTRATE SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To make a semiconductor film identifiable from above an insulation substrate, and cut the substrate more easily, by mounting the substrate on a stage covered with heat-and-dry paint which turns black on at least a part of surface with the semiconductor film of pattern formation downward, and irradiating a visible light from above the substrate. CONSTITUTION:A stainless steel stage 21 is covered with heat-and-dry type paint 26 which turns black like phthalic acid resin enamel black. A saphire substrate 22 with an Si-patterned semiconductor film 23 is mounted thereupon with the film 23 downward. Next, a visible light is irradiated from above the substrate 22. Light reflections 24, 25 which penetrate and reflect at the substrate 22 are detected. The light reflection 25 from the stage 21 decreases by over one digit in strength as compared to the light reflection 24 from the substrate film 23. This enables the film 23 position to be identified correctly. Therefore, the cutting position is identified correctly, and the substrate is cut easily.</p>
申请公布号 JPS57148350(A) 申请公布日期 1982.09.13
申请号 JP19810033372 申请日期 1981.03.09
申请人 NIPPON DENKI KK 发明人 NAKAMURA YOSHIHIRO
分类号 H01L21/301;H01L21/302;H01L21/304 主分类号 H01L21/301
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