发明名称 LASER ANNEALING APPARATUS FOR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To provide laser annealing without the damage of a mask pattern by a method wherein an optical mask which has a mask effect on laser beams is made to face an Si substrate slightly away from the substrate and laser beam scanning is carried out after the pattern of the substrate and that of the mask are matched. CONSTITUTION:An optical mask holding mechanism 11 comprises a mask stage 11b fixed by columns 11a and 11a' above a base 10, and a means for attaching part of a laser beam mask 12 to an opening 11c provided in the center of the stage. Next by the use of a semiconductor wafer holding mechanism 13, a semiconductor wafer 14 is supported in a parallel with the mask 12 and slightly separated from the mask in the opening 11. At the same time, the mechanism 13 is moved up and down by a gap setting mechanism 15 to provide the predetermined space. Then the mechanism 13 is moved and turned by moving stages 16x and 16y in XY directions and a rotary stage 16theta to carry out the predetermined scanning using a laser beam scanning mechanism 17 provided above the mask 12.
申请公布号 JPS57148351(A) 申请公布日期 1982.09.13
申请号 JP19810033144 申请日期 1981.03.10
申请人 TOKYO SHIBAURA DENKI KK 发明人 ABE MASAYASU;AOYAMA MASAHARU;YASUJIMA TAKASHI;YONEZAWA TOSHIO
分类号 G03F7/20;H01L21/268;H01L21/302 主分类号 G03F7/20
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