| 摘要 |
PURPOSE:To form the stripe structured semiconductor laser element characterized by no distortion in an active layer, low oscillation starting current values, and long life, by introducing solid diffusing technology, and utilizing an electrode forming layer for obtaining ohmic contact as a diffusing source. CONSTITUTION:On an Si doped, N<+> type, GaAs substrate 12, an Si doped, N type, Ga0.7Al0.3As layer 13, an Si doped, P type GaAs layer 14, a Te doped, N type Ga0.7Al0.3As layer 15, and a Te doped, N type, GaAs layer 16 are formed by a continuous, liquid phase epitaxial growing method. With a photoresist film 22 having holes as a mask, etching is performed, and the stripes which are to become concave electrode parts 17 are provided. Then the film 22 is removed. A Zn doped, P<+> type GaAs layer 18 for contact is layered on the entire surface. Heat treatment is performed, and Zn in the layer 18 is diffused. Zn reaches the layer 14 at the electrode parts 17, and stops in the layer 15 in the other part. Thereafter, an Au-ZnP side electrode 20 is deposited on the surface of the layer 18, and an Au-GeN side electrode 21 is deposited on the bottom surface of the substrate 12. |
