| 摘要 |
PURPOSE:To obtain the titled device wherein threshold current values are inclined and the light output is large, in the semiconducotor laser device having a double heterogeneous structure, by providing an optical guide layer at the part adjacent to an active layer, wherein the difference in the width of an inhibition band is at least 0.15 eV or more, and providing a carrier confining layer between the active layer and the optical guide layer. CONSTITUTION:On a GaAs substrate 10, an N type Ga1-xAlxAs (0.2<=x<=0.6) clad layer 1, an N type Ga1-yAlyAs (0.1<=y<=0.5) optical guide layer 2, an N type Ga1-zAlzAs (0.1<=z<=0.5) carrier confining layer 5, a Ga1-wAlwAs (0<=w<=0.3) active layer 3, and a P type Ga1-vAlvAs (0.2<=v<=0.6) clad layer 4 are laminated and grown, and they are surrounded by a Ga1-uAlAs (0.1<=u<=0.6) embedding layer 6. Then an electrode 11 is deposited on the bottom surface 1 of the substrate 10. An insulating layer 12 is provided on the layer 4. An opening is provided in the ligitudinal direction. An electrode 13 is provided so as to contact with the layer 4. A power source is connected to the electrodes 11 and 13. |
