| 摘要 |
PURPOSE:To permit production of a growth layer having a reduced impurity density and a high purity by achieving an epitacxial growth in such a condition that III group metal is maintained at the temperature range of 850-1,050 deg.C. CONSTITUTION:Raw material In is inserted int a quartz port 1 and HCl is introduced from an introduction tube 2 together with H2 of carrier gas. PH2 diluted with H2 is introduced from an introduction tube 3. A crystal of InP projecting with an inclination of 5 degree from a face 100 to a direction 110 is used. A growth temperature is set at 670 deg.C in response to electric furnace 5 and the In temperature is varied 800 deg.C-900 deg.C. As the In temperature is increased, the carrier density is decreased and becomes 7X10<15>cm<-3> at 920 deg.C. Further, the temperature is raised and the carrier density of 2-3X10<14>cm<-3> can be obtained at 1,050 deg.C substantially. In this way, the solubility of the impurity element to the III group element is increased by raising the temperature and consequently the impurity amount reaching the substrate surface can be reduced. |
