| 摘要 |
PURPOSE:To know the effect of a channel stopper without providing any specific measuring element, by a method wherein a metal wiring being connected to a separate region to be made an island-shaped region is provided additionally on an oxide film formed on an island-shaped region of a bi-polar IC whereon a supply voltage is impressed and on a channel stopper region surrounding this region. CONSTITUTION:An n<+> type buried layer 2 is formed diffusely on a p type semiconductor substrate 1, an n type layer is grown epitaxially on the whole surface including the layer 2, and the layer 2 is separated to be the first island-shaped region 4 by a p type region 3 ranging to the substrate 1. Next, the second island-shaped region which is composed of p type regions 6 and 7 to serve as resistors and on which the maximum voltage is impressed is formed diffusely in the surface layer part of the region 4 and the channel stoppers 8-8'' are provided between them. Thereafter, metal wirings 12-14 are provided at both ends in the longitudinal direction of the regions 6 and 7 and, furthermore, a metal wiring 10 positioned on the stoppers 8 and 8' is connected to the intermediate part of the regions 6 and 7 perpendicularly thereto through the intermediary of an oxide film 9, while the end part of the wiring 10 is connected to the region 3. By this constitution, the presence of the effect of the change in surface density can be checked. |
