| 摘要 |
PURPOSE:To prevent the emission of alpha rays, and to obtain the IC, which causes no soft error and operates at high speed, by using a high melting-point metal containing Pb at the rate of a specified range or its silicide as the gate electrode or conducting wiring of the IC. CONSTITUTION:An Mo evaporating source 2 and a Pb evaporating source 3 are mounted into a vacuum vessel 1, Mo is evaporated by irradiating beams to the Mo evaporating source 2 from an electron gun 4 and Pb is evaporated by irradiating the quantity of electron beams of one twentieth of the beams of the gun 4 to the Pb evaporating source 3 from an electron gun 5, and Mo containing not more than 5% Pb is evaporated onto an Si substrate 6 to be evaporated for a gate electrode or wiring. Accordingly, the IC which causes no soft error and operates at high speed, can be obtained because the gate film or wiring, which has low resistance and inhibits the emission of alpha rays, can be formed. |
