| 摘要 |
PURPOSE:To contrive the improvement of current amplification factor of the lateral type transistor by a method wherein, after completion of heat treatment at the temperature of 1,000 deg.C or above, a substrate is treated at the temperature range of 750-900 deg.C for two hours or more in O2 or N2. CONSTITUTION:A thermal oxide film 2 is provided on an N type Si substrate 1, apertures 3C and 3E are provided, and a P layer 4 is formed by performing B diffusion. While these procedures are performed, the N type substrate 1 is heat- treated at the temperature of 1,000 deg.C or above, a distortion is generated on the substrate, and the life of minority carrier is reduced. Subsequently, the above is processed in O2 or N2 at the temperature range of 750-900 deg.C for two hours, an aperture 5 is provided, an electrode 6 is attached, and the lateral type transistor is completed. According to this constitution, the current amplifying factor is improved by adding a very simple process, and the variation of amplification is reduced, thereby enabling to contrive stabilization of current amplification. |
