| 摘要 |
<p>A semiconductor wafer (3, 14, 24) is irradiated with a linearly polarized infrared light beam. On the bases of changes in the polarized state of the light reflected from the wafer, the distribution of the density of carriers depthwise in the wafer is determined. Distribution of the carrier density in the semiconductor wafer can be measured very rapidly in a contactless manner without destroying the wafer.</p> |
