| 摘要 |
PURPOSE:To prevent malfunction at bubble transfer, by forming the conductor pattern of a transfer gate so that it is not overlapped with monor loops. CONSTITUTION:A conductor pattern 27 in a hairpin loop is formed at a counter position with a major loop 25 and a minor loop 26 via an insulation layer so that the pattern 27 can not be overlapped with the loop 26. Thus, the magnetic bubbles from the loop 26 are written in a tip (a) correctly at a circumference (b) of the loop 26, and malfunction generated by the extension of the magnetic bubble along the pattern 27 and due to mutual operation between the minor loop and conductor pattern can be prevented, allowing to obtain the magnetic bubble memory element by an ion injection method with high reliability. |
