| 摘要 |
PURPOSE:To unite elements and miniaturize a detector, by forming an infrared detecting element on one of layers with multi-semiconductor piles different in forbidden band-width each other, providing an active circuit element on the other layer having a wider forbidden band-width than a layer where it is formed, and connecting them electrically. CONSTITUTION:A lower growth layer 21 of Hg0.7Cd0.3Te is grown in epitaxial on a large-area, single crystal thin-plate 20 of CdTe, where circuit elements like FETs are formed. Next, a small-area, upper layer 22 of Hg0.8Cd0.2Te is grown in epitaxial on it. An infrared detecting element is provided thereon. The surfaces of layers 21, 22 are covered with insulating films 23, 24 respectively. The forbidden band-width of the layer 21 for circuit element provision is chosen larger than that of the layer 22 for detecting element formation in this fashion. And yet, this provides unity on the same single crystal thin-plate 20. These connections are facilitated and their sizes are reduced. |
