| 摘要 |
PURPOSE:To obtain the transfer device having excellent maximum operating frequency and charge detecting sensitivity for the subject charge transfer device by a method wherein an output gate electrode, adjoining the charge transfer electrode provided on a charge transfer region, is composed of the resistance electrode being arranged accompanying a device imparting potential gradient in longitudinal direction. CONSTITUTION:A charge transfer region 12 is provided on a P type Si substrate 1, transfer electrodes 3-6 are provided on the region 12, and at the same time, an output gate electrode 7 is formed along the electrode 6. Also, an N type source region 10' and an MOS transistor consisting of a drain region 14 and a gate electrode 8 are provided, and the region 10' is connected to the gate of an MOS transistor 9 constituting a follower circuit. In this constitution, an output gate electrode 7 is formed using the resistance electrode of an MOS transistor film and an inclination is given to the electric potential, the channel potential located under the electrode 7 is inclined, and the diffusion speed of the carrier is increased. |
