Gallium arsenide burrus FET structure for optical detection

摘要

A GaAs FET structure with a high electric field region, or active region, contacted by source, gate and drain electrodes is provided which can be used for high speed optical detection or for microwave oscillator optical injection locking. The device provides for efficient coupling of optical radiation into the active region through an opening in a semi-insulating substrate used to support the device. A buffer layer between the active region and the substrate prevents leakage current to the substrate, permits a larger illumination window for improved optical coupling and provides mechanical support for the FET detector. GaAs photodetectors are also provided by eliminating the gate electrode.