| 摘要 |
PURPOSE:To enhance photo sensibility of a laminated channel type IG semiconductor device by a method wherein a source layer, a channel layer and a drain layer are laminated on a transparent substrate, and a gate electrode is provided on the side thereof interposing an insulating film between them. CONSTITUTION:A transparent electrode 20 of tin oxide, etc., is provided on the transparent substrate 1, the amorphous or semiamorphous semiconductor layer 2 for source, the semiconductor layer 4 for channel and the semiconductor layer 5 for drain having breadth of forbidden band smaller than the layer 2 are laminated thereon, and the insulating film is provided on the side thereof. The gate electrode is provided thereon to constitute the laminated channel type insulated gate semiconductor device. Accordingly light irradiated through the substrate can be absorbed effectively to enhance sensibility. |
