MIS TYPE SIMICONDUCTOR DEVICE AND MANUFACTURE OF THE SAME

摘要

PURPOSE:To realize flattering of an element and improve reliability by utilizing a polycrystal silicon layer on a substrate. CONSTITUTION:An N type source region 23 and drain region 24 are formed in a P type single crystal semiconductor substrate 22 and a channel region 25 is formed between those two regions. A source contact metal 26 and a drain contact metal 27 are formed and a source electrode 28 and a drain electrode 29 of silicide are formed on the respective metals. A gate electrode 31 of polycrystalline silicon is formed on the channel region 25 via gate insulation film 30 and the side of the channel region 25 is insulated by polycrystalline silicon oxide films 32 and 33 and the top surface of the region 25 is covered by silicon nitride film 38. The surface is flattened by forming elements separating insulation films 36 and 37 of polycrystalline silicon oxide layer on the substrate 22 via silicon oxide films 34 and 35 surrounding thses gate, source and drain electrode regions.