| 摘要 |
PURPOSE:To ease concentrated field and improve dielectric strength characteristics of an MIS transistor, by providing an electrode for a field. CONSTITUTION:A source region 4, a channel region 2, an offset region 3, and a drain region 5 are arranged in order on an insulative substrate 1. A gate electrode 6 is provided on the channel region 2 with an interval Gg apart. A source electrode 7 and a drain electrode 8 are provided. Therminals 9, 10, 11 are drawn from each electrode. An MIS transistor is made as mentioned above. A field electrode 31 is provided for both the channel region 2 and offset region 3 with an interval Gf apart larger than the interval Gg. It is connected to the gate electrode 6. Or, a field electrode 51 is provided for both the drain region 5 and offset region 3, and connected to the drain electrode 8. Or both the field electrodes 31, 51 are provided. This eases field concentration at boundaries 13, 14. |
