发明名称 TRANSISTORS
摘要 PCT No. PCT/JP79/00059 Sec. 371 Date Nov. 2, 1979 Sec. 102(e) Date Nov. 2, 1979 PCT Filed Mar. 9, 1979 PCT Pub. No. WO79/00736 PCT Pub. Date Oct. 4, 1979.In a transistor wherein a plurality of emitter regions are formed in a base region, resistor regions which have the opposite conductivity type to the conductivity type of the emitter regions and which act as stabilizing resistors, are formed in the emitter regions. The resistors regions are commonly connected through an emitter wiring electrode or electrodes, and each of the resistor regions is connected to the emitter region corresponding thereto. In order to allow the conductor for connecting each of the resistor regions to the emitter region corresponding thereto to be arranged on a chip without intersecting the emitter wiring electrode or electrodes, the emitter regions are arranged in a line or lines, and the resistor regions are formed in the emitter regions so as to intersect the line or lines.
申请公布号 GB2037483(B) 申请公布日期 1982.08.18
申请号 GB19790036323 申请日期 1979.03.09
申请人 FUJITSU LTD 发明人
分类号 H01L21/331;H01L23/522;H01L29/08;H01L29/417;H01L29/73;H01L29/74;(IPC1-7):01L29/72;01L29/08 主分类号 H01L21/331
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