| 摘要 |
PURPOSE:To equalize the thickness of the grown film of the subject reactor by a method wherein, in the reactor provided with a plurality of nozzles to be used for reaction gas injection on the upper part of a truncated pyramidal material whereon a plurality of the materials to be processed are adhered on the circumferential surface, while the gas injection is temporarily stopped before and after the edge part of the susceptor circumferential surface crosses the point directly below the nozzles, and carrier gas for prevention of pressure fluctuation is brought in. CONSTITUTION:A hexagonal truncated cone-shaped susceptor 2 is rotatably installed on a base stand 1, the radial supporting pipe 9 with a number of nozzles 10 is provided at the upper part of the base stand and reaction gas is brought in from the feed pipe 8 which is passing through the rotating shaft 3 of the susceptor 2. Also, decompression preventing pipe 18 which is penetrating the feed pipe 8 is protruded upward and surrounded by the transparent quartz bell jar 11 having an inflared ray lamp 15 and a reflecting plate 16. After the subject rector has been constituted as above, a wafer is adhered on the side face of the susceptor 2, gas injection is temporarily stopped when the edge part of the susceptor 2 is positioned at a point directly below the nozzle 10, and the inside pressure of the bell jar 11 is stabilized by feeding H2 gas from the pipe 18. |
