发明名称 |
Method for precision shaping of wafer materials |
摘要 |
The invention provides a novel and efficient apparatus for shaping wafer materials of exact dimensions from a single crystal rod. Different from the conventional procedure, the single crystal rod is first ground to have a cross section larger than the desired wafer by a margin to grind and then sliced into margined wafers and the margined wafer is subjected to contour grinding tracing a prototype of the desired wafer. The invention also provides an apparatus for the above process, with which the margined wafer can be not only ground to the exact diameter and outer shape but also chamfered at the peripheral edges successively by a single mounting on the apparatus.
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申请公布号 |
US4344260(A) |
申请公布日期 |
1982.08.17 |
申请号 |
US19800165191 |
申请日期 |
1980.07.01 |
申请人 |
NAGANO ELECTRONICS INDUSTRIAL CO., LTD. |
发明人 |
OGIWARA, KESAMI |
分类号 |
B24B9/06;B28D5/00;H01L21/304;(IPC1-7):B24B1/00 |
主分类号 |
B24B9/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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