| 摘要 |
PURPOSE:To prevent defective connection due to overetching by forming an insulating film, which has a through-hole on a contact hole, to the first wiring layer connected to the impurity region of a semiconductor layer through the contact hole and connecting the first wiring layer and the wiring layer of an upper layer. CONSTITUTION:The semiconductor layer 1 to which the impurity region 2 is shaped is coated with an insulating film 4, and the contact hole 3 is bored to one part of the insulating film 4. Metallic wiring 5 is formed selectively onto the insulating film 4, and the metallic wiring 5 and the impurity region 2 are connected through the contact hole 3. The metallic wiring 5 and the insulating film 4 are coated with the insulating film 6, the through-hole 7 is shaped to the insulating film 6 on the contact hole 3, and metallic wiring 8 is molded. Even when there happens an overetching phenomenon reaching the metallic wiring 5 when forming the through-hole 7, the metallic wiring 8 is connected to the impurity region 2, and the metallic wiring 5, 8 are connected through the impurity region 2. |
