Thin-film electroluminescence device and process for producing it

摘要

Thin-film electroluminescence device having a thin-film electroluminescence layer (4) which contains a dopant or impurity forming the luminescence centres and is formed on a heat-resistant substrate (1) which supports the thin-film electroluminescence layer (4). The substrate (1) has a stress-relief temperature which is so high that it is capable of withstanding a heat treatment of the thin-film electroluminescence layer (4) in a nonoxidising atmosphere, such as a vacuum or an inert gas, up to about 600 DEG C. The substrate (1) is preferably composed of aluminoborosilicate having a stress-relief temperature of about 650 DEG C or over. <IMAGE>