| 摘要 |
PURPOSE:To simplify a writing process, by making the width of a gate electrode part for a nonselective MOS shorter than the width of a gate electrode part for a selective MOS, in an ROM, thereby conducting the nonselective MOS. CONSTITUTION:A gate electrode 5 is provided on a semiconductor substrate 1 via an insulating layer 4. The width l of the electrode part 25 of this electrode at a nonselective element part is shorter than the width L of the electrode part at a selective element part. By diffusing impurities with said electrode 5 as a mask, source and drain regions 2 and 3 are formed, and the source and drain regions 22 and 23 at the nonselective part are electrically connected. Thus information for the ROM can be written into the semiconductor device without complicating the processes. |
