| 摘要 |
PURPOSE:To obtain an imbedded type and semiconductor laser device oscillating at all possible peak frequencies with its structure remaining the same by a method wherein layers of ZnSe are imbedded in an N type GaAs substrate sandwitching a light emitting layer. CONSTITUTION:Imbedded layers 8 made of ZnSe are provided to sandwich a light emitting layer 2 on an N type GaAs substrate 1. A ZnSe crystal possessing a lattice parameter of approximately 5.668Angstrom that is roughly equal to those of GaAs and GaAlAs crystals and its termal expansion coefficient is also approximately equal to theirs, a quanlity crystal of ZnSe can be grown on a GaAs or GaAlAs crystal. A ZnSe crystal, by using the molecular ray epitaxial growth technique, can be grown, regardless of the quantity of Al present in the first N type layer 3, an active layer 4, and the first P type layer 5. Accordingly, the composition of Al in the active layer 4 can be set as desired, and light confining in the active layer 4 can be improved a great deal when compared with a conventional device. |
