| 摘要 |
PURPOSE:To contrive the improvement of integration as well as to simplify the manufacture of the subject Schottky barrier diode by a method wherein a guard ring section is formed by preforming a self-slignment for a Schottky barrier section. CONSTITUTION:A thermal oxidizing treatment is performed on an N type silicon substrate 11, a thermal oxide film 12 is formed on the surface of the substrate 11, and a silicon nitride film 13 having a selective etching property is formed on the film 12. Then, an aperture 14 is formed by performing a selective etching on the film 13, and then using the film 13 as an mask, a aperture 16 is formed by overetching the film 12 utilizing an overhang 15. Besides, a boron-added crystal silicon film 17 having the second conductive impurities is deposited on the film 13 including the aperture 16, and then an etching is perormed on the film 17 in such a manner that the film 17 will remain at the lower part of the overhang 15. Subsequently, boron is deffused on the substrate 11 from the film 17', and after a P<+> type guard ring section 18 has been formed for the aperture section 16 by performing a self-alignment, a silicide layer 19 is formed on the remaining surface of the film 17' by performing heat treatment, and the an Al wiring 20 is formed. |
