发明名称 MULTILAYER SOLID STATE DEVICE
摘要 <p>A plasma polymerized ethane thin film deposited on a variety of substrates has been discovered to be an improved interlayer dielectric. It is a material having property of high dielectric strength and unique low dielectric constant. It also has advantages of depositing pinhole free, crack resistant with good step coverage and low deposition cost.</p>
申请公布号 JPS57124812(A) 申请公布日期 1982.08.03
申请号 JP19810196713 申请日期 1981.12.07
申请人 HONEYWELL INC 发明人 YAKOBU DABURIYUU RIN;RESURII ESU UEINMAN
分类号 H05K3/28;B32B27/06;H01B17/60;H01L21/312;H01L23/498;H01L27/01;H05K1/00;H05K1/03;H05K3/46 主分类号 H05K3/28
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