发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To easily remove the resist layer for subject semiconductor element by a method wherein positive type resist layers consisting of two layers, having different photosensitive wavelength limits, are laminated when the electrode forming process of the lift-off method is used. CONSTITUTION:A silicon oxide layer 5 and a nitride silicon layer 25 are laminated on a silicon substrate 1 having a P-N junction, and an aperture is opened at the laminated section. After a positive resist layer 44a, sensitive to a far ultraviolet ray region, has been coated on the whole surface of the substrate and a prebaking has been performed, a positive resist 44b which is sensitive to a near ultraviolet ray region is coated. The sensitive part of the resist layer 44b is removed by irradiating near ultraviolet rays using a mask 7, and the sensitive part of the resist layer 44a is removed by irradiating far ultraviolet rays. When electrode layers 13 and 13' are coated, as a laminated resist layer is overhangingly formed, the electrode layers can be positively separated, and the resist layer can be removed easily.
申请公布号 JPS57124434(A) 申请公布日期 1982.08.03
申请号 JP19810009104 申请日期 1981.01.26
申请人 TOKYO SHIBAURA DENKI KK 发明人 KATOU CHIHARU;NAKAMURA HATSUO;ABE TOSHIHIRO
分类号 G03F7/26;H01L21/027;H01L21/30;(IPC1-7):01L21/30 主分类号 G03F7/26
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