摘要 |
PURPOSE:To easily remove the resist layer for subject semiconductor element by a method wherein positive type resist layers consisting of two layers, having different photosensitive wavelength limits, are laminated when the electrode forming process of the lift-off method is used. CONSTITUTION:A silicon oxide layer 5 and a nitride silicon layer 25 are laminated on a silicon substrate 1 having a P-N junction, and an aperture is opened at the laminated section. After a positive resist layer 44a, sensitive to a far ultraviolet ray region, has been coated on the whole surface of the substrate and a prebaking has been performed, a positive resist 44b which is sensitive to a near ultraviolet ray region is coated. The sensitive part of the resist layer 44b is removed by irradiating near ultraviolet rays using a mask 7, and the sensitive part of the resist layer 44a is removed by irradiating far ultraviolet rays. When electrode layers 13 and 13' are coated, as a laminated resist layer is overhangingly formed, the electrode layers can be positively separated, and the resist layer can be removed easily. |