MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To produce desired wafers by forming impurity diffusion regions for gettering in advance of formation of elements on semiconductor substrate. CONSTITUTION:A boron nitride film 3 is formed by gaseous phase chemical reaction, and a protective film 4 of silicon oxide or the like is successively formed on the boron nitride film 3 on the second side (reverse side) of a substrate 1 on which a protective film 2 has been coated on the first side of the main faces. A highly concentrated boron diffusion region 5 is then produced on the first side of the main faces of the substrate 1 by heat treatment of the substrate 1 at a temperature of maximum solid solubility. Next, the protective film 2 on the first side is removed with the protective film 4 on the second side remaining as it is. This process allows reduction in crystallographical defects caused in the process of the manufacture or generation and recombination centers of conduction charges resulting from contamination.