Molybdenum di:sulphide semiconductor device mfr. - including heat treatment in hydrogen plasma

摘要

Mfg. electronic devices which include a thin film of MoS2 includes at least one heat treatment of the film at between 100 deg.C and the temp. of crystallisation of the material in an atmos. of a plasma contg. hydrogen or one of its isotopes. The MoS2 film is prepd. by vapour deposition or cathode sputtering onto a substrate heat to above 100 deg.C. The method is used in mfr. of semiconductor devices on large surfaces, e.g. above 100 sq.cm. esp. for mfr. of solar batteries. A claimed use is as a photodiode. The MoS2 presents no grain boundaries over such large areas with minimum formation of broken bonds.