| 摘要 |
PURPOSE:To obtain stable contact on both of the surface of molybdenum and a silicon substrate by a method wherein etching for cleaning is performed to the surface of impurity implanting regions in the silicon substrate and to the surface of molybdenum. CONSTITUTION:When impurities are to be introduced into source and drain regions 2, 3, the ion implanting method is used. Then sputter etching is performed with the intension of cleaing of the surfaces of a gate electrode 5 and a wiring pattern 6 consisting of molybdenum. Al films 10 are adhered on the source and drain regions 2, 3, the gate electrode 5, and the wiring pattern 6 by the evaporation method, etc. As a result, at the gas electrode 5 and the wiring pattern 6 consisting of molybdenum, because the surface thereof are etched to be cleaned directly before formation of the aluminum film 10, favorable contact can be obtained. |
