发明名称 |
METHOD AND APPARATUS FOR DEPOSITING SEMICONDUCTOR AND OTHER FILMS |
摘要 |
<p>It is known to deposit films by decomposition of a gas in a glow discharge, e.g. silane is decomposed to deposit amorphous silicon a substrate. The invention improves the uniformity of deposition by shaping the electrode 2 bearing the substrate and the counter electrode 4 to provide a non-uniform electric field with a weak field over the substrate and a more remote strong field. The gas pressure is adjusted to stabilize the glow discharge P in the weak field region; the discharge spreads all over this region but is excluded from the strong field region, ie. gap d. Alternative embodiments have a counter electrode formed by an array of pins facing the substrate electrode or two back-to-back substrate electrodes with substrates on their outer surfaces. The strong field is then round the edges of the electrodes and AC energization is employed. …<??>The invention is suitable for making multi-layer semiconductor devices, e.g. Schottky barrier devices and solar cell devices.</p> |
申请公布号 |
EP0002383(B1) |
申请公布日期 |
1982.07.28 |
申请号 |
EP19780300737 |
申请日期 |
1978.12.05 |
申请人 |
PLASMA PHYSICS CORPORATION |
发明人 |
COLEMAN, JOHN H. |
分类号 |
C30B25/06;C23C16/50;C23C16/503;C23C16/509;H01J37/32;H01L21/205;H01L21/302;H01L31/00;H01L31/04;H01L31/075;H01L31/20;(IPC1-7):23C11/00;01L21/205 |
主分类号 |
C30B25/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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