| 摘要 |
<p>PURPOSE:To curtail assembling time and to enhance dielectric strength of a stud type semiconductor device for large electric power by a method wherein an insulating cylinder body having nearly the T-shape section is provided at the outside circumference of an inside lead to adhere with pressure a semiconductor element. CONSTITUTION:The semiconductor element 23 for large electric power of thyristor, etc., is adhered with pressure on a stud by the inside lead 25, the insulating cylinder body 26 having nearly the T-shape section is provided on the outside circumferential face of the inside lead 25, and initially coned disk spring 28 are provided at the outside circumference thereof. Accordingly positioning of the inside lead can be performed precisely and easily, curtailment of assembling time can be attained, and moreover enhancement of dielectric strength is also enabled.</p> |
