| 摘要 |
PURPOSE:To improve the high frequency characteristics and the noise characteristics of a field effect transistor (FET) having source and drain regions on the recesses at both sides by forming a gate region on the projection in a semiconductor layer formed on an insulating layer having unevenness on the surface of a substrate. CONSTITUTION:Uneven grooves having approx. 0.01-0.2mum of depth are formed in moire shape on the surface of a thick SiO2 film 11 formed on an Si substrate 11. An N type polycrystalline Si layer is grown, a laser is emitted to the layer to align the crystalline orientation and to convert the polycrystal into single crystal. A P<+> type gate layer 15 is formed on the projection of the insulating layer 11 in the single crystal Si layer 12, thereby forming an N<+> type source layer 13 and the drain layer 14. The part except the element region is removed and pulled out, an electrode 17 is provided, and a bonding pad 17' is formed on the SiO2 film 11. In this manner, a parasitic capacity can be ignored, thereby improving the high frequency and the noise characterisrics. |
