| 摘要 |
PURPOSE:To facilitate desired property control of FET by performing heat treatments a plurality of times separately using at least one of Pt, Ti or Pd as a gate metal. CONSTITUTION:An active layer 32 is formed by implanting Si ion in semi- insulator GaAs crystal 31. Then a source electrode 33 and a drain electrode 34 are formed. At least one of Pt, Ti or Pd is vapor deposited as gate electrode and heat treated more than twice. As a result, if Pt is used for the electrode 35, formation of PtAs compound progresses along with heat treatment, a Schottkey electrode 37 penetrates into the layer 32, becoming equivalent to recess construction. Series resistance between the gate 35 and the source 33, and between the gate 35 and drain 34 is reduced. |
