| 摘要 |
PURPOSE:To obtain a semiconductor substrate having an element isolating region of flat surface by providing a groove in the substrate with a mask when oxide insulating layer laid via a diffused region is provided on the substrate to isolate the region, covering the overall surface with an insulating layer, remaining it only in the groove, and removing the other. CONSTITUTION:A photoresist material layer 9 of the prescribed pattern is provided on the surface 2 of a semiconductor substrate 1, with the layer as a mask it is etched to form a groove on the exposed surface 2. Then, an element isolating region 7 is formed only at the bottom of the groove by an ion implantation, the layer 9 is then removed, is then heat treated, and an oxide insulating layer 10 is produced on the overall surface while burying the groove. Thereafter, the layer 10 is removed by ion washer etching until the surface 2 is exposed, with the region 7 primarily laid, and an insulating layer 8 is disposed on the region is obtained as an isolating region. In this manner, the substrate having a flat surface is formed, to be adapted for an MOSFET. |
