| 摘要 |
PURPOSE:To prevent deterioration of light emitting property and to facilitate long life, by connecting a Dumet wire directly to one electrode, and through a metal bump to another electrode both of which are provided on the both sides of a semiconductor substrate. CONSTITUTION:Electrodes for electrical connection are provided on a GaP red light emitting element 6, a kind of III-IV compound semiconductor elements. An electrode layer 8 consisting of Au-Si-Ni alloy is made on an N side substrate and an electrode layer 9 consisting of Au-Be-Ag group alloy is made on opposing P side substrate. A Dumet wire 10 made of copper covered Fe-Ni alloy is attached to the electrode layer 8 and the Dumet wire 11 is attached through a metal bump to the electrode 9. The substrate 6 contacts the Dumet wires 10, 11 and the contact point is inserted in a transparent glass tube 13 and heat treated at 650 deg.C to be sealed hermetically. |
