| 摘要 |
PURPOSE:To manufacture a highly reliable Hall device by a method wherein an SiO2 or Si3N4 film is formed after slightly oxidating a GaAs crystal surface. CONSTITUTION:An n type GaAs layer 2 is eiptaxially grown on a semi-insulating GaAs crystalline substrate 1 and the surface of the layer 2 is subjected to high temperatures for the formation of an oxide film 6. Then an SiO2 film or an Si3N4 film 3 with a thickness not more than 2,500Angstrom is formed and a contact hole is provided wherein an ohmic electrode 4 is built. Lastly, mesa etching completes the Hall device. This procedure suppresses the generation of pin-holes 5 and thereby improves quality and reliability of the product. |
