| 摘要 |
PURPOSE:To manufacture amorphous silicon in a superior yield of starting material by allowing generated hydrogen to be occluded in a hydrogen occluding material when hydrogen silicide is thermally decomposed to manufacture amorphous silicon. CONSTITUTION:When hydrogen silicide such as silane or silicoethylene is thermally decomposed by a plasma CVD method to manufacture high purity amorphous silicon, upper and lower electrodes 2, 3 are arranged in a reaction chamber 1, a substrate 5 for depositing amorphous silicon is set on the lower electrode 3, and a hydrogen occluding material 23 such as an Mg alloy crushed to fine grains having 10mum-5mm. size is put in the chamber 1 by 10<-2>g-1kg per 10l volume of the chamber 1. The chamber 1 is evacuated, and a heater 6 is heated with a power source to raise the temp. Gaseous hydrogen silicide such as silane and gaseous starting material for forming p type or n type silicon from cylinders 7-9 are mixed in a mixing and feeding chamber 24 and fed to the chamber 1, and plasma discharge is caused between the electrodes 2, 3 to deposit amorphous silicon on the substrate 5. By-produced hydrogen is allowed to be occluded in the occluding material 23. |
