发明名称 FERRODIELECTRIC MEMORY AND ITS DRIVING METHOD
摘要 PURPOSE:To speed up storage of information and readout, to increase storage capacity and to achieve small size and thin thickness, by providing a photo transmission electrode on the surface of a ferrodielectric thin film. CONSTITUTION:A ferrodielectric thin film 1 is formed with a ferrodielectric substance in which D-E hysteresis shows a steep square characteristic, e.g., a material consisting of BaTiO3 system polycrystal as the major composition. A photo transmission electrode 2 is provided on the surface of the film 1 to constitute a ferrodielectric memory, and laser beam is radiated to an electrode 2 when an electric field with less absolute value than the electric field Ec between the electrodes 2 and 4. Thus, readout/write-in of a truth value ''1'' and truth value ''0'' is made respectively to residual polarizations -Pr and Pr on a curve at a desired location on the film 1. a: laser beam
申请公布号 JPS57117186(A) 申请公布日期 1982.07.21
申请号 JP19810003549 申请日期 1981.01.12
申请人 TOKYO DENKI KAGAKU KOGYO KK 发明人 ONABETA SHIYUUICHI
分类号 G11B9/02;G11C11/22 主分类号 G11B9/02
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