发明名称 Integrated circuit device with interconnect-level logic diodes.
摘要 <p>Logic circuitry is implemented in a semiconductor device using decoupling diodes formed between active areas at or between levels of interconnect formed above a monocrystalline semiconductor substrate. Schottky transistor logic and other forms of bipolar iogic can be fabricated with significant area reductions using output-decoupling diodes disposed at sites which are remote from the output nodes corresponding logic-gates.</p>
申请公布号 EP0056186(A2) 申请公布日期 1982.07.21
申请号 EP19810305990 申请日期 1981.12.21
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 SLOAN, BENJAMIN J.;DE JONG, GLENN A.
分类号 H01L27/00;H01L21/329;H01L21/8222;H01L23/522;H01L27/06;H01L29/04;H01L29/861;(IPC1-7):01L21/70;01L27/06;01L23/52;03K19/092 主分类号 H01L27/00
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