发明名称 |
Integrated circuit device with interconnect-level logic diodes. |
摘要 |
<p>Logic circuitry is implemented in a semiconductor device using decoupling diodes formed between active areas at or between levels of interconnect formed above a monocrystalline semiconductor substrate. Schottky transistor logic and other forms of bipolar iogic can be fabricated with significant area reductions using output-decoupling diodes disposed at sites which are remote from the output nodes corresponding logic-gates.</p> |
申请公布号 |
EP0056186(A2) |
申请公布日期 |
1982.07.21 |
申请号 |
EP19810305990 |
申请日期 |
1981.12.21 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SLOAN, BENJAMIN J.;DE JONG, GLENN A. |
分类号 |
H01L27/00;H01L21/329;H01L21/8222;H01L23/522;H01L27/06;H01L29/04;H01L29/861;(IPC1-7):01L21/70;01L27/06;01L23/52;03K19/092 |
主分类号 |
H01L27/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|