Nonvolatile semiconductor memory device.

摘要

A nonvolatile semiconductor memory device including at least one memory cell which comprises a floating-gate (6), a control gate (8) and a single impurity diffusion region (3) formed exclusively for the memory cell. In this device, a small depletion region (9) and a large depletion region (9') due to the charged and discharged state of the floating-gate (6) represent the information «1» and «0>.