| 摘要 |
PURPOSE:To obtain a photoconductive material superior in negative charging characteristics, durability, etc., by providing an amorphous silicon photoconductor layer containing either or both of H and halogen on a conductive substrate, and forming a thin amorphous barrier layer containing boron as a main component, and H on the photoconductor layer. CONSTITUTION:A photoconductive layer 102 containing silicon as a main component, and either or both of H and halogen is formed on a conductive substrate. A surface barrier layer 103, 3-1,000nm thick, containing 1-50atom% H is formed on the layer 102 with an amorphous material represented by the following formula containing B and H: a-BxH1-x where 0<x<1, thus permitting the obtained photoconductive material 100 to be improved in negative charging performance and charging characteristics in high humidity atmospheres, and dark decay property, and enhanced in resolution and durability, because the surface electrons are hindered from intruding into the layer 102, but positive holes are not hindered from intruding. Further, a lower barrier layer is formed between the layer 102 and the substrate 101 using a material containing silicon as a main component and any one or more of C, N, and O, or an insulating material to enhance dark decay preventing property still higher. |
