| 摘要 |
PURPOSE:To obtain a junction having good wettability without junction fatigue by forming the surface of a connector of a semiconductor integrated circuit to a wiring substrate of an intermetallic compound and forming soldered part of pure metal or rare thin alloy of the pure metal. CONSTITUTION:An IC chip 1 has an aluminum electrode 7. A glass dam 12 is formed except the connector on the electrode 7. A Ti conductive film 8, a Cu conductive film 9 and an Ni conductive film 10 are sequentially deposited on the connector. On the other hand, a W conductive layer 16, an Ni conductive layer 15 and a glass dam 14 are formed on a wiring substrate 5. Sn is deposited as a mask on the layers 10 and 15 to produce intermetallic compounds 11, 13 of the Ni and the Sn. Further, connecting materials 17, 18 of pure Pb are deposited on the compounds as masks. Subsequently, an IC chip 1 is faced and placed on the substrate 5, and is heated. Then, the materials 17, 18 are molten to perform the solder connection. |
