发明名称 GATE CIRCUIT FOR GATE TURN-OFF THYRISTOR
摘要 PURPOSE:To reduce the power of a gate circuit for a gate turn-off thyristor GTO, so that an off-circuit and an on-circuit can be controlled with the same control element at a bundle. CONSTITUTION:When an on-signal is inputted to a photocoupler PC1, a transistor (TR) Q1 turns on and a TRQ2 turns off. Thus, a TRQ3 turns on and an on-gate current flows to a GTO in the path of R10 Q3 GTO gate cathode ground. When the GTO turns on, the TRQ3 turns off and the on-gate current is narrowed. When the input signal to the photocoupler is absent, the TRQ2 turns on and the TRQ3 turns off. When the TRQ3 turns off, a TRQ4 turns on and a gate current flows to a thyristor TH1 to turn on the Th1, and an off-gate current is supplied to the GTO in the path of ground cathode of GTO gate of GTO L1 Th1 to turn off the GTO.
申请公布号 JPS57113627(A) 申请公布日期 1982.07.15
申请号 JP19800188646 申请日期 1980.12.29
申请人 HITACHI SEISAKUSHO KK 发明人 MATSUDA YASUO;HONDA KAZUO;FUKUI HIROSHI;AMANO HISAO;MUSHIYA SHIYUUJI
分类号 H03K17/732 主分类号 H03K17/732
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