| 摘要 |
PURPOSE:To obtain a bidirection switching characteristic symmetrical in a negative and a positive by a method wherein a face for equally dividing a semiconductor layer into the upper and lower section is used for a symmetrical face and the upper and lower semiconductor layers are formed symmetrical in terms of a thickness and impurity mixing amount. CONSTITUTION:A lower electrode of Mo, Cr, Ar, SnO2, etc. is formed on an insulation substrate 41 made of glass or the like and semiconductor layers 43 through 47 are formed by a plasma CVD method, further an upper electrode 48 is formed. The semiconductor layer 43 serves as an n layer, the layer 44, as an i layer, the layer 45 as a p layer, the layer 46 as an i layer and the layer 47 serves as an n layer, and a face for equally dividing the layer 43 through 47 into the upper and lower section is used for a symmetrical face and the thickness and impurity mixing amount are taken symmetrically. Namely, the n layers 43, 47 are formed equally in terms of the thickness and impurity mixing amount and the i layers 44, 46 are formed equal in terms of the thickness. According to such a constitution, the bidirection switching element formed symmetrical can be obtained. |
