| 摘要 |
PURPOSE:To enable the formation of a large and stable laser mark with a low power device by forming a mark by emitting the laser light continuously at least more than twice. CONSTITUTION:A laser mark is formed on the surface of a semiconductor device by emitting first laser light. In other words, the metal wire 1 on the surface of the semiconductor device and a part of an oxidized film 2 are heated and molten by the laser light to form a laser mark. At this time the periphery of the laser mark is not molten, but becomes high temperature. When second emission of the laser mark is performed, a large laser mark 3' is formed. The mark 3' formed by the second emission is much larger than that produced at the first emission and stable. |
