发明名称 EPITAXIAL WAFER AND SWITCH ELEMENT AND LIGHT-EMITTING ELEMENT USING SAME
摘要 An epitaxial wafer comprises an epitaxial layer disposed on a substrate. The epitaxial layer comprises a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm2 or less.
申请公布号 WO2014084550(A1) 申请公布日期 2014.06.05
申请号 WO2013KR10646 申请日期 2013.11.21
申请人 LG INNOTEK CO., LTD. 发明人 KANG, SEOK MIN;KIM, JI HYE;BAE, HEUNG TEAK
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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