发明名称 |
EPITAXIAL WAFER AND SWITCH ELEMENT AND LIGHT-EMITTING ELEMENT USING SAME |
摘要 |
An epitaxial wafer comprises an epitaxial layer disposed on a substrate. The epitaxial layer comprises a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm2 or less. |
申请公布号 |
WO2014084550(A1) |
申请公布日期 |
2014.06.05 |
申请号 |
WO2013KR10646 |
申请日期 |
2013.11.21 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
KANG, SEOK MIN;KIM, JI HYE;BAE, HEUNG TEAK |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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