| 摘要 |
PURPOSE:To optically obtain temperatures necessary for layer growth by a method wherein means for radiating infrared rays or laser beams upon a semiconductor substrate is housed in a unit for chemical vapor growth designed for the treatment of semiconductor oxides and P silicate glass. CONSTITUTION:A quartz made vacuum vessel 1 accommodating a semiconductor substrate 2 to be worked on is provided with a reactive gas intake port 3 and a reactive gas exhaust port 4. The substrate 2 is placed on a suscepter 5 that is heated up to about 300 deg.C and rotated for the purpose of accelerating chemical reaction. An infrared radiation system 6 consisting exemplifiedly of halogen or xenon lamps are provided encircling the reactive gas intake port 3. Infrared rays 7 are projected upon the substrate 2 when films exemplifiedly of SiO2 or PSG are to be grown thereon. A laser may be used instead. Speed of growth on the substrate 2 or on Al wirings being adjustable, a layer of right thickness may be grown on each of said items. |
