| 摘要 |
PURPOSE:To make a longitudinal width narrow and obtain highly integrated device such as an IC by a method wherein SBD of a Schottky clamp transistor is positioned perpendicular to the parallel direction of a collector contact, base and emitter independently. CONSTITUTION:A transistor TR to which SBD is clamped as a driver is provided in series to a word line 10 of, for instance, a P-ROM memory IC which consist of a TTL circuit. The electrode 24 of the SBD.TR is positioned, not in parallel direction with each region of the transistor as by conventional method, but perpendicular to the direction independently instead. For instance, the electrode 24 is positioned in the longitudinal direction of the emitter region 23 and the base region 22 including the base contac region 22C and by the side of the collector contact region 21c. With above configuration, the longitudinal width of the SBD.TR which limits the integrity of the cell portion can be narrowed when the memory is composed, so that a highly integrated IC can be obtained. |
