发明名称 |
PLANAR STRUCTURE IMPROVED FOR HIGH WITHSTAND VOLTAGE SEMICONDUCTOR DEVICE |
摘要 |
Two gaps are placed in the reflowed phosphorus-doped silicon dioxide material overcoating of a planar high voltage semiconductor device to prevent polarization of the reflowed silox. The invention is applicable to any device using a polarizable glassy coating which will be exposed to a high electric field extending along its surface and is shown applied to a high voltage diode, a high voltage MOSFET and a high voltage TRIMOS-type device which is a semiconductor switching device using spaced MOS transistors having a common drain region. |
申请公布号 |
JPS57112034(A) |
申请公布日期 |
1982.07.12 |
申请号 |
JP19810184332 |
申请日期 |
1981.11.17 |
申请人 |
INTERN RECTIFIER CORP |
发明人 |
TOOMASU HAAMAN;AREKUSANDAA RIDOU |
分类号 |
H01L21/316;H01L21/331;H01L23/31;H01L23/58;H01L29/06;H01L29/08;H01L29/40;H01L29/73;H01L29/739;H01L29/747;H01L29/78;H01L29/861 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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