| 摘要 |
PURPOSE:To obtain the excellent ohmic contact for the subject semiconductor device by a method wherein a mask, with which a transistor forming region is covered and a contact electrode forming region is exposed, is provided on the oxide film which was coated on a semiconductor substrate, and the impurity ion of the same conductive type as the substrate is implanted in the electrode forming region. CONSTITUTION:A thin SiO2 film 12 is formed on the P type Si substrate 11, covered by an Si3N4 film, and a mask 13 of the Si3N4 film is remained only on the substrate contact electrode forming region CS and the transistor forming region Q by performing a patterning using a photoresist film 14. Then, among the films 14, the film 14 on the region Q only is renewed with the resist film 15 which covers all the exposed surface of the mask 13, and a B<+> ion is implanted on the whole surface. Subsequently, a field oxide film 16, a channel cut region 18 and a high impurity density region 19 are grown respectively by selectively performing a thermal oxidization using the mask 13. Then, source and drain regions 22 and 23 and the like are formed using an ordinary method, and then a contact electrode 26 is formed on the region 19. |
